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| NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features http://onsemi.com 18 AMPS, 400 VOLTS VCE(on) 3 2.0 V @ IC = 10 A, VGE . 4.5 V C * Ideal for Coil-on-Plug Applications * Gate-Emitter ESD Protection * Temperature Compensated Gate-Collector Voltage Clamp Limits * * * * * * * * Stress Applied to Load Integrated ESD Diode Protection New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Integrated Gate-Emitter Resistor (RGE) Emitter Ballasting for Short-Circuit Capability Pb-Free Package is Available G RGE E D2PAK CASE 418B STYLE 4 MARKING DIAGRAM 4 Collector Unit VDC VDC VDC ADC AAC kV 8.0 ESD PD TJ, Tstg 800 115 0.77 -55 to +175 V W W/C C GB18N40B A Y WW G 1 Gate 3 Emitter 2 Collector = Device Code = Assembly Location = Year = Work Week = Pb-Free Package GB 18N40BG AYWW MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Gate Voltage Gate-Emitter Voltage Collector Current-Continuous @ TC = 25C - Pulsed ESD (Human Body Model) R = 1500 W, C = 100 pF ESD (Machine Model) R = 0 W, C = 200 pF Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Temperature Range Symbol VCES VCER VGE IC ESD Value 430 430 18 18 50 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ORDERING INFORMATION Device NGB18N40CLBT4 NGB18N40CLBT4G Package D2PAK D2PAK (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Shipping 800/Tape & Reel 800/Tape & Reel (c) Semiconductor Components Industries, LLC, 2006 1 May, 2006 - Rev. 3 Publication Order Number: NGB18N40CLB/D NGB18N40CLBT4 UNCLAMPED COLLECTOR-TO-EMITTER AVALANCHE CHARACTERISTICS (-55 TJ 175C) Characteristic Single Pulse Collector-to-Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 21.1 A, L = 1.8 mH, Starting TJ = 25C VCC = 50 V, VGE = 5.0 V, Pk IL = 18.3 A, L = 1.8 mH, Starting TJ = 125C Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25C Symbol EAS 400 300 EAS(R) 2000 mJ Value Unit mJ MAXIMUM SHORT-CIRCUIT TIMES (-55C TJ 150C) Characteristic Short Circuit Withstand Time 1 (See Figure 17, 3 Pulses with 10 ms Period) Short Circuit Withstand Time 2 (See Figure 18, 3 Pulses with 10 ms Period) Symbol tsc1 tsc2 Value 750 5.0 Unit ms ms THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient D2PAK (Note 1) Symbol RqJC RqJA TL Value 1.3 50 275 Unit C/W C/W C Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector-Emitter Clamp Voltage BVCES IC = 2.0 mA IC = 10 mA Zero Gate Voltage Collector Current ICES VCE = 350 V, VGE = 0 V Reverse Collector-Emitter Leakage Current IECS VCE = -24 V TJ = -40C to 150C TJ = -40C to 150C TJ = 25C TJ = 150C TJ = -40C TJ = 25C TJ = 150C TJ = -40C Reverse Collector-Emitter Clamp Voltage BVCES(R) IC = -75 mA TJ = 25C TJ = 150C TJ = -40C Gate-Emitter Clamp Voltage Gate-Emitter Leakage Current Gate Emitter Resistor ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGE(th) IC = 1.0 mA, VGE = VCE Threshold Temperature Coefficient (Negative) - - TJ = 25C TJ = 150C TJ = -40C - 1.1 0.75 1.2 - 1.4 1.0 1.6 3.4 1.9 1.4 2.1* - mV/C VDC BVGES IGES RGE IG = 5.0 mA VGE = 10 V - TJ = -40C to 150C TJ = -40C to 150C TJ = -40C to 150C 380 390 - - - - - - 27 30 25 11 384 10 395 405 2.0 10 1.0 0.7 12 0.1 33 36 32 13 640 16 420 430 20 40* 10 2.0 25* 1.0 37 40 35 15 100 0 26 VDC mADC kW Symbol Test Conditions Temperature Min Typ Max Unit VDC mADC mA VDC *Maximum Value of Characteristic across Temperature Range. 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. http://onsemi.com 2 NGB18N40CLBT4 ELECTRICAL CHARACTERISTICS Characteristic ON CHARACTERISTICS (Note 2) Collector-to-Emitter On-Voltage VCE(on) IC = 6.0 A, VGE = 4.0 V TJ = 25C TJ = 150C TJ = -40C TJ = 25C IC = 8.0 A, VGE = 4.0 V TJ = 150C TJ = -40C TJ = 25C IC = 10 A, VGE = 4.0 V TJ = 150C TJ = -40C TJ = 25C IC = 15 A, VGE = 4.0 V TJ = 150C TJ = -40C TJ = 25C IC = 10 A, VGE = 4.5 V Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS Turn-Off Delay Time (Resistive) Fall Time (Resistive) Turn-On Delay Time Rise Time td(off) tf td(on) tr VCC = 300 V, IC = 6.5 A RG = 1.0 kW, RL = 46 W, VCC = 300 V, IC = 6.5 A RG = 1.0 kW, RL = 46 W, VCC = 10 V, IC = 6.5 A RG = 1.0 kW, RL = 1.5 W VCC = 10 V, IC = 6.5 A RG = 1.0 kW, RL = 1.5 W TJ = 25C TJ = 25C TJ = 25C TJ = 25C - - - - 4.0 9.0 0.7 4.5 10 15 4.0 7.0 mSec mSec CISS COSS CRSS VCC = 25 V, VGE = 0 V f = 1.0 MHz 400 TJ = -40C to 150C 50 4.0 75 7.0 800 100 0 100 10 pF gfs VCE = 5.0 V, IC = 6.0 A TJ = 150C TJ = -40C TJ = -40C to 150C 1.0 0.9 1.1 1.3 1.2 1.4 1.4 1.5 1.4 1.8 2.0 1.7 1.3 1.3 1.4 8.0 1.4 1.3 1.45 1.6 1.55 1.6 1.8 1.8 1.8 2.2 2.4 2.1 1.8 1.75 1.8 14 1.6 1.6 1.7* 1.9* 1.8 1.9* 2.05 2.0 2.1* 2.5 2.6* 2.5 2.0* 2.0* 2.0* 25 Mhos VDC Symbol Test Conditions Temperature Min Typ Max Unit *Maximum Value of Characteristic across Temperature Range. 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. http://onsemi.com 3 NGB18N40CLBT4 TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted) 60 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) VGE = 10 V 50 40 30 20 3V 10 0 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) 2.5 V TJ = 25C 5V 4.5 V 4V 3.5 V 60 VGE = 10 V 50 4.5 V 40 TJ = -40C 30 3.5 V 20 3V 10 2.5 V 0 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) 4V 5V Figure 1. Output Characteristics 60 IC, COLLECTOR CURRENT (AMPS) VGE = 10 V 50 5V 40 TJ = 150C 30 4V 20 10 0 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) 3.5 V 3V 2.5 V 4.5 V 60 IC, COLLECTOR CURRENT (AMPS) 55 50 45 40 35 30 25 20 15 10 5 0 0 1 Figure 2. Output Characteristics VCE = 10 V TJ = -40C TJ = 150C TJ = 25C 2 3 4 5 6 7 8 VGE, GATE TO EMITTER VOLTAGE (VOLTS) Figure 3. Output Characteristics VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) COLLECTOR TO EMITTER VOLTAGE (VOLTS) Figure 4. Transfer Characteristics 4.0 3.5 3.0 2.5 2.0 IC = 10 A 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 IC = 5 A VGE = 5 V IC = 25 A IC = 20 A IC = 15 A 3 TJ = 25C 2.5 IC = 15 A 2 1.5 1 0.5 0 3 4 5 6 7 8 9 10 GATE-TO-EMITTER VOLTAGE (VOLTS) IC = 10 A IC = 5 A TJ, JUNCTION TEMPERATURE (C) Figure 5. Collector-to-Emitter Saturation Voltage versus Junction Temperature Figure 6. Collector-to-Emitter Voltage versus Gate-to-Emitter Voltage http://onsemi.com 4 NGB18N40CLBT4 COLLECTOR TO EMITTER VOLTAGE (VOLTS) 3 2.5 2 1.5 IC = 5 A 1 0.5 0 3 4 5 6 7 8 9 10 GATE TO EMITTER VOLTAGE (VOLTS) IC = 15 A IC = 10 A TJ = 150C 10000 Ciss C, CAPACITANCE (pF) 1000 100 Coss 10 Crss 1 0 0 20 40 60 80 100 120 140 160 180 200 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) Figure 7. Collector-to-Emitter Voltage versus Gate-to-Emitter Voltage 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 -30 -10 10 30 50 70 90 110 130 150 0 -50 -25 VTH - 4 s IL, LATCH CURRENT (AMPS) VTH + 4 s VTH 30 25 20 15 10 5 Figure 8. Capacitance Variation GATE THRESHOLD VOLTAGE (VOLTS) VCC = 50 V VGE = 5.0 V RG = 1000 W L = 2 mH L = 3 mH L = 6 mH 0 25 50 75 100 125 150 175 TEMPERATURE (C) TEMPERATURE (C) Figure 9. Gate Threshold Voltage versus Temperature 30 IL, LATCH CURRENT (AMPS) 25 L = 2 mH 20 15 10 5 0 -50 -25 L = 3 mH L = 6 mH VCC = 50 V VGE = 5.0 V RG = 1000 W 12 10 SWITCHING TIME (ms) 8 6 Figure 10. Minimum Open Secondary Latch Current versus Temperature VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 10 A L = 300 mH tf td(off) 4 2 0 -50 -30 -10 0 25 50 75 100 125 150 175 10 30 50 70 90 110 130 150 TEMPERATURE (C) TEMPERATURE (C) Figure 11. Typical Open Secondary Latch Current versus Temperature Figure 12. Inductive Switching Fall Time versus Temperature http://onsemi.com 5 NGB18N40CLBT4 100 COLLECTOR CURRENT (AMPS) DC 10 100 ms 1 1 ms 10 ms 100 ms 0.1 COLLECTOR CURRENT (AMPS) 100 10 DC 1 100 ms 1 ms 10 ms 0.1 100 ms 0.01 1 10 100 1000 COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.01 1 10 100 1000 COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 255C) Figure 14. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 1255C) 100 COLLECTOR CURRENT (AMPS) COLLECTOR CURRENT (AMPS) t1 = 1 ms, D = 0.05 10 t1 = 2 ms, D = 0.10 t1 = 3 ms, D = 0.30 1 100 t1 = 1 ms, D = 0.05 10 t1 = 2 ms, D = 0.10 t1 = 3 ms, D = 0.30 1 0.1 0.1 0.01 1 10 100 1000 COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.01 1 10 100 1000 COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 15. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 255C) Figure 16. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 1255C) VBATT = 16 V VBATT = 16 V RL = 0.1 W RL = 0.1 W L = 10 mH L = 10 mH 5.0 V 5.0 V VIN RG = 1 kW RS = 55 mW VIN RG = 1 kW Figure 17. Circuit Configuration for Short Circuit Test #1 http://onsemi.com 6 Figure 18. Circuit Configuration for Short Circuit Test #2 NGB18N40CLBT4 100 Duty Cycle = 0.5 R(t), TRANSIENT THERMAL RESISTANCE (C/Watt) 0.2 10 0.1 0.05 0.02 1 0.01 0.1 0.01 P(pk) Single Pulse t1 t2 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TA = P(pk) RqJA(t) RqJC @ R(t) for t 0.2 s 0.001 0.0001 0.00001 0.0001 0.001 t,TIME (S) 0.01 0.1 1 Figure 19. Transient Thermal Resistance (Non-normalized Junction-to-Ambient mounted on minimum pad area) http://onsemi.com 7 NGB18N40CLBT4 PACKAGE DIMENSIONS D2PAK 3 CASE 418B-04 ISSUE J C E -B- 4 DIM A B C D E F G H J K L M N P R S V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 V W A 1 2 3 S -T- SEATING PLANE K G D H 3 PL M W J 0.13 (0.005) P U L M TB M STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 8.38 0.33 F VIEW W-W 3 10.66 0.42 1.016 0.04 5.08 0.20 3.05 0.12 17.02 0.67 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 8 NGB18N40CLB/D |
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